| PART |
Description |
Maker |
| TSHF5210 |
High Speed Infrared Emitting Diode in T-13/4 Package
|
Vishay Siliconix
|
| VSMB1940X01 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG5210 TSHG521009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMF3710 VSMF371009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMG2720-GS18 VSMG2720-GS08 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHF5200 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
| TSHG820009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
| TSFF5210 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| VSLY3850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|
| VSMY3940X01-GS08 VSMY3940X01-GS18 |
High Speed Infrared Emitting Diode, 940 nm,Surface Emitter Technology
|
Vishay Siliconix
|
